ZXTN2010ZQTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN2010ZQTA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Mounting Type
Surface Mount
Package / Case
TO-243AA
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
Automotive, AEC-Q101
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Additional Feature
HIGH RELIABILITY
Terminal Position
SINGLE
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-F3
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
2.1W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 2A 1V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
230mV @ 300mA, 6A
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
5A
Transition Frequency
130MHz
Frequency - Transition
130MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.052237
$0.052237
500
$0.038409
$19.2045
1000
$0.032008
$32.008
2000
$0.029365
$58.73
5000
$0.027444
$137.22
10000
$0.025529
$255.29
15000
$0.024690
$370.35
50000
$0.024277
$1213.85
ZXTN2010ZQTA Product Details
ZXTN2010ZQTA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 2A 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 230mV @ 300mA, 6A.There is a transition frequency of 130MHz in the part.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.
ZXTN2010ZQTA Features
the DC current gain for this device is 100 @ 2A 1V the vce saturation(Max) is 230mV @ 300mA, 6A a transition frequency of 130MHz
ZXTN2010ZQTA Applications
There are a lot of Diodes Incorporated ZXTN2010ZQTA applications of single BJT transistors.