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ZXTN2010ZQTA

ZXTN2010ZQTA

ZXTN2010ZQTA

Diodes Incorporated

ZXTN2010ZQTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTN2010ZQTA Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case TO-243AA
Surface Mount YES
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Terminal Position SINGLE
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-F3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 2.1W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 1V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 230mV @ 300mA, 6A
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 5A
Transition Frequency 130MHz
Frequency - Transition 130MHz
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.052237 $0.052237
500 $0.038409 $19.2045
1000 $0.032008 $32.008
2000 $0.029365 $58.73
5000 $0.027444 $137.22
10000 $0.025529 $255.29
15000 $0.024690 $370.35
50000 $0.024277 $1213.85
ZXTN2010ZQTA Product Details

ZXTN2010ZQTA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 2A 1V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 230mV @ 300mA, 6A.There is a transition frequency of 130MHz in the part.Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.

ZXTN2010ZQTA Features


the DC current gain for this device is 100 @ 2A 1V
the vce saturation(Max) is 230mV @ 300mA, 6A
a transition frequency of 130MHz

ZXTN2010ZQTA Applications


There are a lot of Diodes Incorporated ZXTN2010ZQTA applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

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