ZXTN25020CFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN25020CFHTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
11 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Max Power Dissipation
1.81W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
185MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTN25020C
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.81W
Power - Max
1.25W
Transistor Application
SWITCHING
Gain Bandwidth Product
185MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 10mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
140mV @ 450mA, 4.5A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
185MHz
Collector Emitter Saturation Voltage
175mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
70V
Emitter Base Voltage (VEBO)
7V
Height
1mm
Length
3.05mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.224805
$0.224805
10
$0.212080
$2.1208
100
$0.200075
$20.0075
500
$0.188750
$94.375
1000
$0.178066
$178.066
ZXTN25020CFHTA Product Details
ZXTN25020CFHTA Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of 175mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 140mV @ 450mA, 4.5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.185MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 20V volts.Single BJT transistor is possible to have a collector current as low as 4.5A volts at Single BJT transistors maximum.
ZXTN25020CFHTA Features
the DC current gain for this device is 200 @ 10mA 2V a collector emitter saturation voltage of 175mV the vce saturation(Max) is 140mV @ 450mA, 4.5A the emitter base voltage is kept at 7V a transition frequency of 185MHz
ZXTN25020CFHTA Applications
There are a lot of Diodes Incorporated ZXTN25020CFHTA applications of single BJT transistors.