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ZXTN25020CFHTA

ZXTN25020CFHTA

ZXTN25020CFHTA

Diodes Incorporated

ZXTN25020CFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTN25020CFHTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Max Power Dissipation1.81W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Frequency 185MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTN25020C
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.81W
Power - Max 1.25W
Transistor Application SWITCHING
Gain Bandwidth Product185MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 140mV @ 450mA, 4.5A
Collector Emitter Breakdown Voltage20V
Transition Frequency 185MHz
Collector Emitter Saturation Voltage175mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 70V
Emitter Base Voltage (VEBO) 7V
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:12437 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.224805$0.224805
10$0.212080$2.1208
100$0.200075$20.0075
500$0.188750$94.375
1000$0.178066$178.066

ZXTN25020CFHTA Product Details

ZXTN25020CFHTA Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 200 @ 10mA 2V DC current gain.As it features a collector emitter saturation voltage of 175mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 140mV @ 450mA, 4.5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.185MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 20V volts.Single BJT transistor is possible to have a collector current as low as 4.5A volts at Single BJT transistors maximum.

ZXTN25020CFHTA Features


the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of 175mV
the vce saturation(Max) is 140mV @ 450mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 185MHz

ZXTN25020CFHTA Applications


There are a lot of Diodes Incorporated ZXTN25020CFHTA applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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