BC817-16LT3G Overview

This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 700mV, it allows for maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 5V allows for a high level of efficiency.The part has a transition frequency of 100MHz.An input voltage of 45V volts is the breakdown voltage.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.

BC817-16LT3G Features

the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 100MHz

BC817-16LT3G Applications

There are a lot of ON Semiconductor BC817-16LT3G applications of single BJT transistors.

• Interface
• Muting
• Driver
• Inverter