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ZXTN25100DFHTA

ZXTN25100DFHTA

ZXTN25100DFHTA

Diodes Incorporated

ZXTN25100DFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTN25100DFHTA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 11 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.81W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 175MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTN25100D
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.81W
Power - Max 1.25W
Transistor Application SWITCHING
Gain Bandwidth Product 175MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 330mV @ 250mA, 2.5A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 175MHz
Collector Emitter Saturation Voltage 330mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 180V
Emitter Base Voltage (VEBO) 7V
Height 1mm
Length 3.05mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.051789 $0.051789
500 $0.038080 $19.04
1000 $0.031733 $31.733
2000 $0.029113 $58.226
5000 $0.027209 $136.045
10000 $0.025310 $253.1
15000 $0.024478 $367.17
50000 $0.024069 $1203.45
ZXTN25100DFHTA Product Details

ZXTN25100DFHTA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 10mA 2V.The collector emitter saturation voltage is 330mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 330mV @ 250mA, 2.5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.The part has a transition frequency of 175MHz.As a result, it can handle voltages as low as 100V volts.Collector current can be as low as 2.5A volts at its maximum.

ZXTN25100DFHTA Features


the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 330mV
the vce saturation(Max) is 330mV @ 250mA, 2.5A
the emitter base voltage is kept at 7V
a transition frequency of 175MHz

ZXTN25100DFHTA Applications


There are a lot of Diodes Incorporated ZXTN25100DFHTA applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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