ZXTN25100DFHTA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 300 @ 10mA 2V.The collector emitter saturation voltage is 330mV, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 330mV @ 250mA, 2.5A.With the emitter base voltage set at 7V, an efficient operation can be achieved.The part has a transition frequency of 175MHz.As a result, it can handle voltages as low as 100V volts.Collector current can be as low as 2.5A volts at its maximum.
ZXTN25100DFHTA Features
the DC current gain for this device is 300 @ 10mA 2V
a collector emitter saturation voltage of 330mV
the vce saturation(Max) is 330mV @ 250mA, 2.5A
the emitter base voltage is kept at 7V
a transition frequency of 175MHz
ZXTN25100DFHTA Applications
There are a lot of Diodes Incorporated ZXTN25100DFHTA applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
