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ZXTN4000ZTA

  • ZXTN4000ZTA
  • ZXTN4000ZTA

ZXTN4000ZTA

ZXTN4000ZTA

Diodes Incorporated

ZXTN4000ZTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTN4000ZTA Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 4
Weight 130.492855mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 1.5W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTN4000
Reference Standard AEC-Q101
JESD-30 Code R-PSSO-F3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Power - Max 1.5W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 150mV
Current - Collector Cutoff (Max) 50nA ICBO
Collector Emitter Breakdown Voltage 60V
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
hFE Min 60
Height 1.6mm
Length 4.6mm
Width 2.6mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.398776 $1.398776
10 $1.319600 $13.196
100 $1.244906 $124.4906
500 $1.174439 $587.2195
1000 $1.107962 $1107.962
ZXTN4000ZTA Product Details

ZXTN4000ZTA Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 150mA 150mV.With the emitter base voltage set at 7V, an efficient operation can be achieved.Input voltage breakdown is available at 60V volts.During maximum operation, collector current can be as low as 1A volts.

ZXTN4000ZTA Features


the DC current gain for this device is 100 @ 150mA 150mV
the emitter base voltage is kept at 7V

ZXTN4000ZTA Applications


There are a lot of Diodes Incorporated ZXTN4000ZTA applications of single BJT transistors.

  • Interface
  • Inverter
  • Muting
  • Driver

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