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BC558BRL1G

BC558BRL1G

BC558BRL1G

ON Semiconductor

BC558BRL1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BC558BRL1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 days ago)
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e1
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional FeatureEUROPEAN PART NUMBER
Subcategory Other Transistors
Voltage - Rated DC -30V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating-100mA
Frequency 360MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BC558
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation625mW
Transistor Application AMPLIFIER
Gain Bandwidth Product360MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 650mV
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 2mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage30V
Transition Frequency 360MHz
Collector Emitter Saturation Voltage-300mV
Collector Base Voltage (VCBO) -30V
Emitter Base Voltage (VEBO) 5V
hFE Min 180
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:215169 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.302473$0.302473
10$0.285352$2.85352
100$0.269200$26.92
500$0.253962$126.981
1000$0.239587$239.587

BC558BRL1G Product Details

BC558BRL1G Overview


This device has a DC current gain of 180 @ 2mA 5V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 650mV @ 5mA, 100mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -100mA.In this part, there is a transition frequency of 360MHz.The maximum collector current is 100mA volts.

BC558BRL1G Features


the DC current gain for this device is 180 @ 2mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 360MHz

BC558BRL1G Applications


There are a lot of ON Semiconductor BC558BRL1G applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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