2SA2070(TE12L,F) Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 200mV @ 10mA, 300mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7V.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

2SA2070(TE12L,F) Features

the DC current gain for this device is 200 @ 100mA 2V
the vce saturation(Max) is 200mV @ 10mA, 300mA
the emitter base voltage is kept at 7V

2SA2070(TE12L,F) Applications

There are a lot of Toshiba Semiconductor and Storage 2SA2070(TE12L,F) applications of single BJT transistors.

• Inverter
• Interface
• Driver
• Muting