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ZXTP25100CFHTA

ZXTP25100CFHTA

ZXTP25100CFHTA

Diodes Incorporated

ZXTP25100CFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP25100CFHTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.81W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 180MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTP25100C
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.81W
Power - Max 1.25W
Transistor Application SWITCHING
Gain Bandwidth Product 180MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 220mV @ 100mA, 1A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 180MHz
Collector Emitter Saturation Voltage -220mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 115V
Emitter Base Voltage (VEBO) 7V
Height 1.02mm
Length 3.04mm
Width 1.4mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.22838 $0.68514
6,000 $0.21263 $1.27578
15,000 $0.21000 $3.15
ZXTP25100CFHTA Product Details

ZXTP25100CFHTA Overview


In this device, the DC current gain is 200 @ 10mA 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of -220mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 220mV @ 100mA, 1A.With the emitter base voltage set at 7V, an efficient operation can be achieved.In this part, there is a transition frequency of 180MHz.This device can take an input voltage of 100V volts before it breaks down.During maximum operation, collector current can be as low as 1A volts.

ZXTP25100CFHTA Features


the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -220mV
the vce saturation(Max) is 220mV @ 100mA, 1A
the emitter base voltage is kept at 7V
a transition frequency of 180MHz

ZXTP25100CFHTA Applications


There are a lot of Diodes Incorporated ZXTP25100CFHTA applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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