ZXTP25100CFHTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP25100CFHTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
7.994566mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
1.81W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Frequency
180MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTP25100C
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.81W
Power - Max
1.25W
Transistor Application
SWITCHING
Gain Bandwidth Product
180MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 10mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
220mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
180MHz
Collector Emitter Saturation Voltage
-220mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
115V
Emitter Base Voltage (VEBO)
7V
Height
1.02mm
Length
3.04mm
Width
1.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
ZXTP25100CFHTA Product Details
ZXTP25100CFHTA Overview
In this device, the DC current gain is 200 @ 10mA 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of -220mV, it allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 220mV @ 100mA, 1A.With the emitter base voltage set at 7V, an efficient operation can be achieved.In this part, there is a transition frequency of 180MHz.This device can take an input voltage of 100V volts before it breaks down.During maximum operation, collector current can be as low as 1A volts.
ZXTP25100CFHTA Features
the DC current gain for this device is 200 @ 10mA 2V a collector emitter saturation voltage of -220mV the vce saturation(Max) is 220mV @ 100mA, 1A the emitter base voltage is kept at 7V a transition frequency of 180MHz
ZXTP25100CFHTA Applications
There are a lot of Diodes Incorporated ZXTP25100CFHTA applications of single BJT transistors.