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BUJ302A,127

  • BUJ302A,127
  • BUJ302A,127

BUJ302A,127

BUJ302A,127

WeEn Semiconductors

BUJ302A,127 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJ302A,127 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position SINGLE
Base Part Number BUJ302A
Reference Standard IEC-60134
JESD-30 Code R-PSFM-T3
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Power - Max 80W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 25 @ 800mA 3V
Current - Collector Cutoff (Max) 250mA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1.5V @ 1A, 3.5A
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 4A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.736000 $0.736
10 $0.694340 $6.9434
100 $0.655037 $65.5037
500 $0.617960 $308.98
1000 $0.582981 $582.981
BUJ302A,127 Product Details

BUJ302A,127 Overview


The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 800mA 3V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 1A, 3.5A.This device displays a 400V maximum voltage - Collector Emitter Breakdown.

BUJ302A,127 Features


the DC current gain for this device is 25 @ 800mA 3V
the vce saturation(Max) is 1.5V @ 1A, 3.5A

BUJ302A,127 Applications


There are a lot of WeEn Semiconductors BUJ302A,127 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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