ZXTN620MATA Overview
This device has a DC current gain of 300 @ 200mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 340mV allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 325mV @ 300mA, 3.5A.Single BJT transistor is recommended to keep the continuous collector voltage at 3.5A in order to achieve high efficiency.Keeping the emitter base voltage at 7V can result in a high level of efficiency.As a result, the part has a transition frequency of 160MHz.There is a breakdown input voltage of 80V volts that it can take.Maximum collector currents can be below 3.8A volts.
ZXTN620MATA Features
the DC current gain for this device is 300 @ 200mA 2V
a collector emitter saturation voltage of 340mV
the vce saturation(Max) is 325mV @ 300mA, 3.5A
the emitter base voltage is kept at 7V
a transition frequency of 160MHz
ZXTN620MATA Applications
There are a lot of Diodes Incorporated ZXTN620MATA applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
