ZXTN620MATA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTN620MATA Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
3-UDFN
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Digi-Reel®
Published
2002
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature
HIGH RELIABILITY
Subcategory
Other Transistors
Max Power Dissipation
2.45W
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Frequency
160MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTN620MA
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2.45W
Case Connection
COLLECTOR
Power - Max
3W
Transistor Application
SWITCHING
Gain Bandwidth Product
160MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
3.8A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 200mA 2V
Current - Collector Cutoff (Max)
25nA
Vce Saturation (Max) @ Ib, Ic
325mV @ 300mA, 3.5A
Collector Emitter Breakdown Voltage
80V
Transition Frequency
160MHz
Collector Emitter Saturation Voltage
340mV
Max Breakdown Voltage
80V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
7V
Continuous Collector Current
3.5A
Height
580μm
Length
2.08mm
Width
2.075mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.198563
$1.198563
10
$1.130720
$11.3072
100
$1.066717
$106.6717
500
$1.006337
$503.1685
1000
$0.949374
$949.374
ZXTN620MATA Product Details
ZXTN620MATA Overview
This device has a DC current gain of 300 @ 200mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 340mV allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 325mV @ 300mA, 3.5A.Single BJT transistor is recommended to keep the continuous collector voltage at 3.5A in order to achieve high efficiency.Keeping the emitter base voltage at 7V can result in a high level of efficiency.As a result, the part has a transition frequency of 160MHz.There is a breakdown input voltage of 80V volts that it can take.Maximum collector currents can be below 3.8A volts.
ZXTN620MATA Features
the DC current gain for this device is 300 @ 200mA 2V a collector emitter saturation voltage of 340mV the vce saturation(Max) is 325mV @ 300mA, 3.5A the emitter base voltage is kept at 7V a transition frequency of 160MHz
ZXTN620MATA Applications
There are a lot of Diodes Incorporated ZXTN620MATA applications of single BJT transistors.