2SCR513PT100 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 50mA 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 130mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 350mV @ 25mA, 500mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.As a result, the part has a transition frequency of 360MHz.During maximum operation, collector current can be as low as 1A volts.
2SCR513PT100 Features
the DC current gain for this device is 180 @ 50mA 2V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 360MHz
2SCR513PT100 Applications
There are a lot of ROHM Semiconductor 2SCR513PT100 applications of single BJT transistors.
- Driver
- Inverter
- Muting
- Interface
