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2SCR513PT100

2SCR513PT100

2SCR513PT100

ROHM Semiconductor

2SCR513PT100 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SCR513PT100 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2013
JESD-609 Code e2
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN COPPER
Subcategory Other Transistors
Max Power Dissipation 2W
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Reach Compliance Code not_compliant
[email protected] Reflow Temperature-Max (s) 10
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 360MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 50V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 180 @ 50mA 2V
Current - Collector Cutoff (Max) 1μA ICBO
Vce Saturation (Max) @ Ib, Ic 350mV @ 25mA, 500mA
Collector Emitter Breakdown Voltage 50V
Current - Collector (Ic) (Max) 1A
Transition Frequency 360MHz
Collector Emitter Saturation Voltage 130mV
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
hFE Min 180
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.194874 $0.194874
10 $0.183843 $1.83843
100 $0.173438 $17.3438
500 $0.163620 $81.81
1000 $0.154359 $154.359
2SCR513PT100 Product Details

2SCR513PT100 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 180 @ 50mA 2V DC current gain.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 130mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation (Max) of 350mV @ 25mA, 500mA means Ic has reached its maximum value(saturated).Keeping the emitter base voltage at 6V can result in a high level of efficiency.As a result, the part has a transition frequency of 360MHz.During maximum operation, collector current can be as low as 1A volts.

2SCR513PT100 Features


the DC current gain for this device is 180 @ 50mA 2V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 360MHz

2SCR513PT100 Applications


There are a lot of ROHM Semiconductor 2SCR513PT100 applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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