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2N6042G

2N6042G

2N6042G

ON Semiconductor

2N6042G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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2N6042G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 75W
Peak Reflow Temperature (Cel) 260
Current Rating -8A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number 2N6042
Pin Count 3
Number of Elements 1
Polarity PNP
Element Configuration Single
Power Dissipation 75W
Case Connection COLLECTOR
Transistor Application SWITCHING
Transistor Type PNP - Darlington
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 8A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A 4V
Current - Collector Cutoff (Max) 20μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A
Collector Emitter Breakdown Voltage 100V
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 8A
Height 15.748mm
Length 10.2616mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.324784 $0.324784
10 $0.306400 $3.064
100 $0.289057 $28.9057
500 $0.272695 $136.3475
1000 $0.257259 $257.259
2N6042G Product Details

2N6042G Overview


This device has a DC current gain of 1000 @ 3A 4V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Maintaining the continuous collector voltage at 8A is essential for high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.This device has a current rating of -8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.

2N6042G Features


the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 12mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -8A

2N6042G Applications


There are a lot of ON Semiconductor 2N6042G applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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