2N6042G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2N6042G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2000
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
75W
Peak Reflow Temperature (Cel)
260
Current Rating
-8A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
2N6042
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
75W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
8A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 3A 4V
Current - Collector Cutoff (Max)
20μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2V @ 12mA, 3A
Collector Emitter Breakdown Voltage
100V
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
8A
Height
15.748mm
Length
10.2616mm
Width
4.826mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.324784
$0.324784
10
$0.306400
$3.064
100
$0.289057
$28.9057
500
$0.272695
$136.3475
1000
$0.257259
$257.259
2N6042G Product Details
2N6042G Overview
This device has a DC current gain of 1000 @ 3A 4V, which is the ratio between the collector current and the base current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2V.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Maintaining the continuous collector voltage at 8A is essential for high efficiency.Keeping the emitter base voltage at 5V can result in a high level of efficiency.This device has a current rating of -8A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.Single BJT transistor is possible for the collector current to fall as low as 8A volts at Single BJT transistors maximum.
2N6042G Features
the DC current gain for this device is 1000 @ 3A 4V a collector emitter saturation voltage of 2V the vce saturation(Max) is 2V @ 12mA, 3A the emitter base voltage is kept at 5V the current rating of this device is -8A
2N6042G Applications
There are a lot of ON Semiconductor 2N6042G applications of single BJT transistors.