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ZXTNS618MCTA

ZXTNS618MCTA

ZXTNS618MCTA

Diodes Incorporated

ZXTNS618MCTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTNS618MCTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-WDFN Exposed Pad
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2016
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory Other Transistors
Max Power Dissipation 3W
Peak Reflow Temperature (Cel) 260
Frequency 140MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTNS618MC
Pin Count 3
Number of Elements 1
Polarity NPN
Element Configuration Dual
Power Dissipation 2.45W
Transistor Application SWITCHING
Gain Bandwidth Product 140MHz
Transistor Type NPN + Diode (Isolated)
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2A 2V
Current - Collector Cutoff (Max) 25nA
Vce Saturation (Max) @ Ib, Ic 270mV @ 125mA, 4.5A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 140MHz
Collector Emitter Saturation Voltage 8mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 7V
Continuous Collector Current 4.5A
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.807920 $1.80792
10 $1.705585 $17.05585
100 $1.609042 $160.9042
500 $1.517964 $758.982
1000 $1.432042 $1432.042
ZXTNS618MCTA Product Details

ZXTNS618MCTA Overview


This device has a DC current gain of 200 @ 2A 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 8mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 270mV @ 125mA, 4.5A.Continuous collector voltages should be kept at 4.5A to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.140MHz is present in the transition frequency.There is a breakdown input voltage of 20V volts that it can take.A maximum collector current of 4.5A volts is possible.

ZXTNS618MCTA Features


the DC current gain for this device is 200 @ 2A 2V
a collector emitter saturation voltage of 8mV
the vce saturation(Max) is 270mV @ 125mA, 4.5A
the emitter base voltage is kept at 7V
a transition frequency of 140MHz

ZXTNS618MCTA Applications


There are a lot of Diodes Incorporated ZXTNS618MCTA applications of single BJT transistors.

  • Driver
  • Inverter
  • Muting
  • Interface

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