ZXTNS618MCTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTNS618MCTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-WDFN Exposed Pad
Number of Pins
8
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2016
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Terminal Finish
Nickel/Palladium/Gold (Ni/Pd/Au)
Subcategory
Other Transistors
Max Power Dissipation
3W
Peak Reflow Temperature (Cel)
260
Frequency
140MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTNS618MC
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Dual
Power Dissipation
2.45W
Transistor Application
SWITCHING
Gain Bandwidth Product
140MHz
Transistor Type
NPN + Diode (Isolated)
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 2A 2V
Current - Collector Cutoff (Max)
25nA
Vce Saturation (Max) @ Ib, Ic
270mV @ 125mA, 4.5A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
140MHz
Collector Emitter Saturation Voltage
8mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
7V
Continuous Collector Current
4.5A
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.807920
$1.80792
10
$1.705585
$17.05585
100
$1.609042
$160.9042
500
$1.517964
$758.982
1000
$1.432042
$1432.042
ZXTNS618MCTA Product Details
ZXTNS618MCTA Overview
This device has a DC current gain of 200 @ 2A 2V, which is the ratio between the base current and the collector current.As it features a collector emitter saturation voltage of 8mV, it allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 270mV @ 125mA, 4.5A.Continuous collector voltages should be kept at 4.5A to achieve high efficiency.With the emitter base voltage set at 7V, an efficient operation can be achieved.140MHz is present in the transition frequency.There is a breakdown input voltage of 20V volts that it can take.A maximum collector current of 4.5A volts is possible.
ZXTNS618MCTA Features
the DC current gain for this device is 200 @ 2A 2V a collector emitter saturation voltage of 8mV the vce saturation(Max) is 270mV @ 125mA, 4.5A the emitter base voltage is kept at 7V a transition frequency of 140MHz
ZXTNS618MCTA Applications
There are a lot of Diodes Incorporated ZXTNS618MCTA applications of single BJT transistors.