SMBTA56E6327HTSA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 100mA 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.An emitter's base voltage can be kept at 4V to gain high efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.In this part, there is a transition frequency of 100MHz.As a result, it can handle voltages as low as 80V volts.When collector current reaches its maximum, it can reach 500mA volts.
SMBTA56E6327HTSA1 Features
the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 100MHz
SMBTA56E6327HTSA1 Applications
There are a lot of Infineon Technologies SMBTA56E6327HTSA1 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
