2SA1036KT146R Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 120 @ 100mA 3V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -600mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 600mV @ 30mA, 300mA.For high efficiency, the continuous collector voltage must be kept at -500mA.Emitter base voltages of -5V can achieve high levels of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.The part has a transition frequency of 200MHz.Input voltage breakdown is available at 32V volts.A maximum collector current of 500mA volts can be achieved.
2SA1036KT146R Features
the DC current gain for this device is 120 @ 100mA 3V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 30mA, 300mA
the emitter base voltage is kept at -5V
the current rating of this device is -500mA
a transition frequency of 200MHz
2SA1036KT146R Applications
There are a lot of ROHM Semiconductor 2SA1036KT146R applications of single BJT transistors.
- Muting
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- Inverter
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- Driver
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- Interface
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