ZXTP05120HFFTA Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 3000 @ 1A 5V.A collector emitter saturation voltage of 900mV ensures maximum design flexibility.A VCE saturation (Max) of 2V @ 2mA, 2A means Ic has reached its maximum value(saturated).Continuous collector voltages of -1A should be maintained to achieve high efficiency.With the emitter base voltage set at -10V, an efficient operation can be achieved.Single BJT transistor contains a transSingle BJT transistorion frequency of 150MHz.Breakdown input voltage is 120V volts.A maximum collector current of 1A volts can be achieved.

ZXTP05120HFFTA Features

• the DC current gain for this device is 3000 @ 1A 5V

• a collector emitter saturation voltage of 900mV

• the vce saturation(Max) is 2V @ 2mA, 2A

• the emitter base voltage is kept at -10V

• a transition frequency of 150MHz

ZXTP05120HFFTA Applications

There are a lot of Diodes Incorporated ZXTP05120HFFTA applications of single BJT transistors.

• Interface

• Muting

• Inverter

• Driver