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MJE18006G

MJE18006G

MJE18006G

ON Semiconductor

MJE18006G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

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MJE18006G Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 6 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2006
Series SWITCHMODE™
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC 450V
Max Power Dissipation 100W
Peak Reflow Temperature (Cel) 260
Current Rating 6A
Frequency 14MHz
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 100W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 14MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 450V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 6 @ 3A 1V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 700mV @ 600mA, 3A
Collector Emitter Breakdown Voltage 450V
Transition Frequency 14MHz
Collector Emitter Saturation Voltage 700mV
Emitter Base Voltage (VEBO) 9V
hFE Min 14
Height 9.28mm
Length 10.28mm
Width 4.82mm
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.89000 $0.89
500 $0.8811 $440.55
1000 $0.8722 $872.2
1500 $0.8633 $1294.95
2000 $0.8544 $1708.8
2500 $0.8455 $2113.75
MJE18006G Product Details

MJE18006G Overview


This device has a DC current gain of 6 @ 3A 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is 700mV, giving you a wide variety of design options.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Emitter base voltages of 9V can achieve high levels of efficiency.Its current rating is 6A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.As you can see, the part has a transition frequency of 14MHz.Single BJT transistor is possible to have a collector current as low as 6A volts at Single BJT transistors maximum.

MJE18006G Features


the DC current gain for this device is 6 @ 3A 1V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 600mA, 3A
the emitter base voltage is kept at 9V
the current rating of this device is 6A
a transition frequency of 14MHz

MJE18006G Applications


There are a lot of ON Semiconductor MJE18006G applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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