ZXTP19100CFFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP19100CFFTA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-3 Flat Leads
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
2W
Terminal Position
DUAL
Peak Reflow Temperature (Cel)
260
Frequency
142MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTP19100C
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
2W
Power - Max
1.5W
Transistor Application
SWITCHING
Gain Bandwidth Product
142MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
50nA ICBO
Vce Saturation (Max) @ Ib, Ic
275mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
142MHz
Collector Emitter Saturation Voltage
-275mV
Max Breakdown Voltage
100V
Collector Base Voltage (VCBO)
110V
Emitter Base Voltage (VEBO)
7V
Height
1mm
Length
3mm
Width
1.7mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.072352
$0.072352
500
$0.053200
$26.6
1000
$0.044333
$44.333
2000
$0.040673
$81.346
5000
$0.038012
$190.06
10000
$0.035360
$353.6
15000
$0.034198
$512.97
50000
$0.033625
$1681.25
ZXTP19100CFFTA Product Details
ZXTP19100CFFTA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.With a collector emitter saturation voltage of -275mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 142MHz.The breakdown input voltage is 100V volts.Maximum collector currents can be below 2A volts.
ZXTP19100CFFTA Features
the DC current gain for this device is 200 @ 100mA 2V a collector emitter saturation voltage of -275mV the vce saturation(Max) is 275mV @ 200mA, 2A the emitter base voltage is kept at 7V a transition frequency of 142MHz
ZXTP19100CFFTA Applications
There are a lot of Diodes Incorporated ZXTP19100CFFTA applications of single BJT transistors.