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ZXTP19100CFFTA

ZXTP19100CFFTA

ZXTP19100CFFTA

Diodes Incorporated

ZXTP19100CFFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP19100CFFTA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-3 Flat Leads
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation2W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 142MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTP19100C
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation2W
Power - Max 1.5W
Transistor Application SWITCHING
Gain Bandwidth Product142MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 100mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 275mV @ 200mA, 2A
Collector Emitter Breakdown Voltage100V
Transition Frequency 142MHz
Collector Emitter Saturation Voltage-275mV
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 110V
Emitter Base Voltage (VEBO) 7V
Height 1mm
Length 3mm
Width 1.7mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:8887 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.072352$0.072352
500$0.053200$26.6
1000$0.044333$44.333
2000$0.040673$81.346
5000$0.038012$190.06
10000$0.035360$353.6
15000$0.034198$512.97
50000$0.033625$1681.25

ZXTP19100CFFTA Product Details

ZXTP19100CFFTA Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 100mA 2V.With a collector emitter saturation voltage of -275mV, it offers maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.Parts of this part have transition frequencies of 142MHz.The breakdown input voltage is 100V volts.Maximum collector currents can be below 2A volts.

ZXTP19100CFFTA Features


the DC current gain for this device is 200 @ 100mA 2V
a collector emitter saturation voltage of -275mV
the vce saturation(Max) is 275mV @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 142MHz

ZXTP19100CFFTA Applications


There are a lot of Diodes Incorporated ZXTP19100CFFTA applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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