MJD50G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJD50G Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 5 days ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
400V
Max Power Dissipation
1.56W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
1A
Frequency
10MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MJD50
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.56W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Gain Bandwidth Product
10MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
400V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 300mA 10V
Current - Collector Cutoff (Max)
200μA
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 1A
Collector Emitter Breakdown Voltage
400V
Transition Frequency
10MHz
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
500V
Emitter Base Voltage (VEBO)
5V
hFE Min
30
Height
2.38mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.87000
$0.87
500
$0.8613
$430.65
1000
$0.8526
$852.6
1500
$0.8439
$1265.85
2000
$0.8352
$1670.4
2500
$0.8265
$2066.25
MJD50G Product Details
MJD50G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 300mA 10V.A collector emitter saturation voltage of 1V ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 5V, an efficient operation can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.In the part, the transition frequency is 10MHz.During maximum operation, collector current can be as low as 1A volts.
MJD50G Features
the DC current gain for this device is 30 @ 300mA 10V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 200mA, 1A the emitter base voltage is kept at 5V the current rating of this device is 1A a transition frequency of 10MHz
MJD50G Applications
There are a lot of ON Semiconductor MJD50G applications of single BJT transistors.