2STR2160 Overview

In this device, the DC current gain is 180 @ 500mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -260mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 5V to gain high efficiency.Breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.

2STR2160 Features

the DC current gain for this device is 180 @ 500mA 2V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 480mV @ 100mA, 1A
the emitter base voltage is kept at 5V

2STR2160 Applications

There are a lot of STMicroelectronics 2STR2160 applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter