2STR2160 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from STMicroelectronics stock available on our website
SOT-23
2STR2160 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
500mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
2STR
Pin Count
3
Number of Elements
1
Element Configuration
Single
Power Dissipation
500mW
Transistor Application
SWITCHING
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
180 @ 500mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
480mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
-260mV
Max Breakdown Voltage
60V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
45
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.058800
$0.0588
500
$0.043235
$21.6175
1000
$0.036029
$36.029
2000
$0.033055
$66.11
5000
$0.030892
$154.46
10000
$0.028737
$287.37
15000
$0.027792
$416.88
50000
$0.027327
$1366.35
2STR2160 Product Details
2STR2160 Overview
In this device, the DC current gain is 180 @ 500mA 2V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -260mV, giving you a wide variety of design options.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).An emitter's base voltage can be kept at 5V to gain high efficiency.Breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 1A volts at Single BJT transistors maximum.
2STR2160 Features
the DC current gain for this device is 180 @ 500mA 2V a collector emitter saturation voltage of -260mV the vce saturation(Max) is 480mV @ 100mA, 1A the emitter base voltage is kept at 5V
2STR2160 Applications
There are a lot of STMicroelectronics 2STR2160 applications of single BJT transistors.