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ZXTP2006E6TA

ZXTP2006E6TA

ZXTP2006E6TA

Diodes Incorporated

ZXTP2006E6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP2006E6TA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 14.996898mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation 1.1W
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -3.5A
Frequency 110MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTP2006
Pin Count 6
Number of Elements 1
Element Configuration Single
Power Dissipation 1.7W
Power - Max 1.1W
Transistor Application SWITCHING
Gain Bandwidth Product 110MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 3.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 130mV @ 350mA, 3.5A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 110MHz
Collector Emitter Saturation Voltage -110mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 7.5V
hFE Min 300
Continuous Collector Current -3.5A
Height 1.3mm
Length 3.1mm
Width 1.8mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.417470 $0.41747
10 $0.393840 $3.9384
100 $0.371547 $37.1547
500 $0.350516 $175.258
1000 $0.330676 $330.676
ZXTP2006E6TA Product Details

ZXTP2006E6TA Overview


In this device, the DC current gain is 300 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of -110mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).For high efficiency, the continuous collector voltage must be kept at -3.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7.5V.The current rating of this fuse is -3.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In the part, the transition frequency is 110MHz.Breakdown input voltage is 20V volts.During maximum operation, collector current can be as low as 3.5A volts.

ZXTP2006E6TA Features


the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of -110mV
the vce saturation(Max) is 130mV @ 350mA, 3.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is -3.5A
a transition frequency of 110MHz

ZXTP2006E6TA Applications


There are a lot of Diodes Incorporated ZXTP2006E6TA applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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