ZXTP2006E6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
ZXTP2006E6TA Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6
Number of Pins
6
Weight
14.996898mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Max Power Dissipation
1.1W
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-3.5A
Frequency
110MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
ZXTP2006
Pin Count
6
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.7W
Power - Max
1.1W
Transistor Application
SWITCHING
Gain Bandwidth Product
110MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
20V
Max Collector Current
3.5A
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 1A 2V
Current - Collector Cutoff (Max)
100nA
Vce Saturation (Max) @ Ib, Ic
130mV @ 350mA, 3.5A
Collector Emitter Breakdown Voltage
20V
Transition Frequency
110MHz
Collector Emitter Saturation Voltage
-110mV
Max Breakdown Voltage
20V
Collector Base Voltage (VCBO)
25V
Emitter Base Voltage (VEBO)
7.5V
hFE Min
300
Continuous Collector Current
-3.5A
Height
1.3mm
Length
3.1mm
Width
1.8mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.417470
$0.41747
10
$0.393840
$3.9384
100
$0.371547
$37.1547
500
$0.350516
$175.258
1000
$0.330676
$330.676
ZXTP2006E6TA Product Details
ZXTP2006E6TA Overview
In this device, the DC current gain is 300 @ 1A 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This design offers maximum flexibility with a collector emitter saturation voltage of -110mV.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).For high efficiency, the continuous collector voltage must be kept at -3.5A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7.5V.The current rating of this fuse is -3.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In the part, the transition frequency is 110MHz.Breakdown input voltage is 20V volts.During maximum operation, collector current can be as low as 3.5A volts.
ZXTP2006E6TA Features
the DC current gain for this device is 300 @ 1A 2V a collector emitter saturation voltage of -110mV the vce saturation(Max) is 130mV @ 350mA, 3.5A the emitter base voltage is kept at 7.5V the current rating of this device is -3.5A a transition frequency of 110MHz
ZXTP2006E6TA Applications
There are a lot of Diodes Incorporated ZXTP2006E6TA applications of single BJT transistors.