2N2484 PBFREE datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Central Semiconductor Corp stock available on our website
SOT-23
2N2484 PBFREE Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
20 Weeks
Mounting Type
Through Hole
Package / Case
TO-206AA, TO-18-3 Metal Can
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Terminal Finish
Matte Tin (Sn)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Power - Max
360mW
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 10μA 5V
Current - Collector Cutoff (Max)
2nA
Vce Saturation (Max) @ Ib, Ic
350mV @ 100μA, 1mA
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
50mA
Frequency - Transition
60MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.085000
$2.085
10
$1.966981
$19.66981
100
$1.855643
$185.5643
500
$1.750606
$875.303
1000
$1.651515
$1651.515
2N2484 PBFREE Product Details
2N2484 PBFREE Overview
In this device, the DC current gain is 100 @ 10μA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 100μA, 1mA.The device has a 60V maximal voltage - Collector Emitter Breakdown.
2N2484 PBFREE Features
the DC current gain for this device is 100 @ 10μA 5V the vce saturation(Max) is 350mV @ 100μA, 1mA
2N2484 PBFREE Applications
There are a lot of Central Semiconductor Corp 2N2484 PBFREE applications of single BJT transistors.