2SC3649S-TD-E Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 100mA 5V.With a collector emitter saturation voltage of 130mV, it offers maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 450mV @ 50mA, 500mA.The emitter base voltage can be kept at 6V for high efficiency.Parts of this part have transition frequencies of 120MHz.A breakdown input voltage of 160V volts can be used.Single BJT transistor is possible for the collector current to fall as low as 1.5A volts at Single BJT transistors maximum.

2SC3649S-TD-E Features

the DC current gain for this device is 100 @ 100mA 5V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 450mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
a transition frequency of 120MHz

2SC3649S-TD-E Applications

There are a lot of ON Semiconductor 2SC3649S-TD-E applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver