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ZXTP25020CFFTA

ZXTP25020CFFTA

ZXTP25020CFFTA

Diodes Incorporated

ZXTP25020CFFTA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXTP25020CFFTA Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-3 Flat Leads
Number of Pins 3
Weight 48.789529mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 1.96W
Terminal Position DUAL
Peak Reflow Temperature (Cel) 260
Frequency 285MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXTP25020C
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 1.96W
Power - Max 1.5W
Transistor Application SWITCHING
Gain Bandwidth Product 285MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 4.5A
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 10mA 2V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 260mV @ 225mA, 4.5A
Collector Emitter Breakdown Voltage 20V
Transition Frequency 285MHz
Collector Emitter Saturation Voltage -65mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) -7V
Continuous Collector Current -4.5A
Height 1mm
Length 3mm
Width 1.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.160180 $0.16018
10 $0.151114 $1.51114
100 $0.142560 $14.256
500 $0.134491 $67.2455
1000 $0.126878 $126.878
ZXTP25020CFFTA Product Details

ZXTP25020CFFTA Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 10mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -65mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 260mV @ 225mA, 4.5A.Continuous collector voltages should be kept at -4.5A to achieve high efficiency.Emitter base voltages of -7V can achieve high levels of efficiency.The part has a transition frequency of 285MHz.This device can take an input voltage of 20V volts before it breaks down.A maximum collector current of 4.5A volts can be achieved.

ZXTP25020CFFTA Features


the DC current gain for this device is 200 @ 10mA 2V
a collector emitter saturation voltage of -65mV
the vce saturation(Max) is 260mV @ 225mA, 4.5A
the emitter base voltage is kept at -7V
a transition frequency of 285MHz

ZXTP25020CFFTA Applications


There are a lot of Diodes Incorporated ZXTP25020CFFTA applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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