2DA1213Y-13 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 50mA, 1A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.In the part, the transition frequency is 160MHz.The breakdown input voltage is 50V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
2DA1213Y-13 Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 1A
the emitter base voltage is kept at 5V
a transition frequency of 160MHz
2DA1213Y-13 Applications
There are a lot of Diodes Incorporated 2DA1213Y-13 applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
