BC850BWH6327XTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 200 @ 2mA 5V.A collector emitter saturation voltage of 600mV ensures maximum design flexibility.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).The base voltage of the emitter can be kept at 6V to achieve high efficiency.Parts of this part have transition frequencies of 250MHz.In extreme cases, the collector current can be as low as 100mA volts.
BC850BWH6327XTSA1 Features
the DC current gain for this device is 200 @ 2mA 5V
a collector emitter saturation voltage of 600mV
the vce saturation(Max) is 600mV @ 5mA, 100mA
the emitter base voltage is kept at 6V
a transition frequency of 250MHz
BC850BWH6327XTSA1 Applications
There are a lot of Infineon Technologies BC850BWH6327XTSA1 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
