ZXTP25140BFHTA Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 2V.A collector emitter saturation voltage of -260mV allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 260mV @ 100mA, 1A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.The current rating of this fuse is -1A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 75MHz.Single BJT transistor can take a breakdown input voltage of 140V volts.The maximum collector current is 1A volts.

ZXTP25140BFHTA Features

the DC current gain for this device is 100 @ 10mA 2V
a collector emitter saturation voltage of -260mV
the vce saturation(Max) is 260mV @ 100mA, 1A
the emitter base voltage is kept at 7V
the current rating of this device is -1A
a transition frequency of 75MHz

ZXTP25140BFHTA Applications

There are a lot of Diodes Incorporated ZXTP25140BFHTA applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver