2SA1832-Y,LF Overview

In this device, the DC current gain is 120 @ 2mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.Emitter base voltages of 5V can achieve high levels of efficiency.Breakdown input voltage is 50V volts.During maximum operation, collector current can be as low as 150mA volts.

2SA1832-Y,LF Features

the DC current gain for this device is 120 @ 2mA 6V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 5V

2SA1832-Y,LF Applications

There are a lot of Toshiba Semiconductor and Storage 2SA1832-Y,LF applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver