2SA1832-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
2SA1832-Y,LF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Contact Plating
Silver, Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SC-75, SOT-416
Operating Temperature
125°C TJ
Packaging
Cut Tape (CT)
Published
2007
Pbfree Code
yes
Part Status
Discontinued
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
100mW
Reach Compliance Code
unknown
Power - Max
100mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
300mV
Max Collector Current
150mA
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 2mA 6V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
300mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage
50V
Max Breakdown Voltage
50V
Frequency - Transition
80MHz
Collector Base Voltage (VCBO)
50V
Emitter Base Voltage (VEBO)
5V
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$5.752918
$5.752918
10
$5.427281
$54.27281
100
$5.120077
$512.0077
500
$4.830261
$2415.1305
1000
$4.556850
$4556.85
2SA1832-Y,LF Product Details
2SA1832-Y,LF Overview
In this device, the DC current gain is 120 @ 2mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 10mA, 100mA.Emitter base voltages of 5V can achieve high levels of efficiency.Breakdown input voltage is 50V volts.During maximum operation, collector current can be as low as 150mA volts.
2SA1832-Y,LF Features
the DC current gain for this device is 120 @ 2mA 6V the vce saturation(Max) is 300mV @ 10mA, 100mA the emitter base voltage is kept at 5V
2SA1832-Y,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SA1832-Y,LF applications of single BJT transistors.