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FJPF5027OTU

FJPF5027OTU

FJPF5027OTU

ON Semiconductor

FJPF5027OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

FJPF5027OTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Published 2003
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 800V
Max Power Dissipation 40W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Current Rating 3A
Frequency 15MHz
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number FJPF5027
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 40W
Case Connection ISOLATED
Transistor Application SWITCHING
Gain Bandwidth Product 15MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 800V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 200mA 5V
Current - Collector Cutoff (Max) 10μA ICBO
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 2V @ 300mA, 1.5A
Collector Emitter Breakdown Voltage 800V
Transition Frequency 15MHz
Collector Emitter Saturation Voltage 2V
Collector Base Voltage (VCBO) 1.1kV
Emitter Base Voltage (VEBO) 7V
hFE Min 10
Height 15.87mm
Length 10.16mm
Width 4.7mm
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.27000 $1.27
10 $1.13800 $11.38
100 $0.89450 $89.45
500 $0.74456 $372.28
1,000 $0.59457 $0.59457
FJPF5027OTU Product Details

FJPF5027OTU Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 200mA 5V.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 300mA, 1.5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.A transition frequency of 15MHz is present in the part.A maximum collector current of 3A volts is possible.

FJPF5027OTU Features


the DC current gain for this device is 20 @ 200mA 5V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2V @ 300mA, 1.5A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 15MHz

FJPF5027OTU Applications


There are a lot of ON Semiconductor FJPF5027OTU applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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