FJPF5027OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
FJPF5027OTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
14 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Number of Pins
3
Weight
2.27g
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Published
2003
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
800V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
3A
Frequency
15MHz
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
FJPF5027
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
40W
Case Connection
ISOLATED
Transistor Application
SWITCHING
Gain Bandwidth Product
15MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
800V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 200mA 5V
Current - Collector Cutoff (Max)
10μA ICBO
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
2V @ 300mA, 1.5A
Collector Emitter Breakdown Voltage
800V
Transition Frequency
15MHz
Collector Emitter Saturation Voltage
2V
Collector Base Voltage (VCBO)
1.1kV
Emitter Base Voltage (VEBO)
7V
hFE Min
10
Height
15.87mm
Length
10.16mm
Width
4.7mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.27000
$1.27
10
$1.13800
$11.38
100
$0.89450
$89.45
500
$0.74456
$372.28
FJPF5027OTU Product Details
FJPF5027OTU Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20 @ 200mA 5V.The collector emitter saturation voltage is 2V, giving you a wide variety of design options.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2V @ 300mA, 1.5A.If the emitter base voltage is kept at 7V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 3A for this device.A transition frequency of 15MHz is present in the part.A maximum collector current of 3A volts is possible.
FJPF5027OTU Features
the DC current gain for this device is 20 @ 200mA 5V a collector emitter saturation voltage of 2V the vce saturation(Max) is 2V @ 300mA, 1.5A the emitter base voltage is kept at 7V the current rating of this device is 3A a transition frequency of 15MHz
FJPF5027OTU Applications
There are a lot of ON Semiconductor FJPF5027OTU applications of single BJT transistors.