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EPC2019

EPC2019

EPC2019

EPC

GAN TRANS 200V 8.5A BUMPED DIE

SOT-23

EPC2019 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
Series eGaN®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology GaNFET (Gallium Nitride)
FET Type N-Channel
Rds On (Max) @ Id, Vgs 50mOhm @ 7A, 5V
Vgs(th) (Max) @ Id 2.5V @ 1.5mA
Input Capacitance (Ciss) (Max) @ Vds 270pF @ 100V
Current - Continuous Drain (Id) @ 25°C 8.5A Ta
Gate Charge (Qg) (Max) @ Vgs 2.5nC @ 5V
Drain to Source Voltage (Vdss) 200V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) +6V, -4V
Continuous Drain Current (ID) 8.5A
Input Capacitance 270pF
Rds On Max 50 mΩ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $2.388138 $2.388138
10 $2.252960 $22.5296
100 $2.125434 $212.5434
500 $2.005126 $1002.563
1000 $1.891629 $1891.629

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