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BSC020N03LSGATMA1

BSC020N03LSGATMA1

BSC020N03LSGATMA1

Infineon Technologies

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 2m Ω @ 30A, 10V ±20V 7200pF @ 15V 93nC @ 10V 8-PowerTDFN

SOT-23

BSC020N03LSGATMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 26 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerTDFN
Number of Pins 8
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series OptiMOS™
Published 2009
JESD-609 Code e3
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Additional Feature AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 8
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 2.5W Ta 96W Tc
Operating Mode ENHANCEMENT MODE
Power Dissipation 96W
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250μA
Halogen Free Halogen Free
Input Capacitance (Ciss) (Max) @ Vds 7200pF @ 15V
Current - Continuous Drain (Id) @ 25°C 28A Ta 100A Tc
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage 30V
Drain-source On Resistance-Max 0.0029Ohm
Pulsed Drain Current-Max (IDM) 400A
RoHS Status ROHS3 Compliant
Lead Free Contains Lead
Pricing & Ordering
Quantity Unit Price Ext. Price
5,000 $0.72897 $3.64485
10,000 $0.70472 $7.0472
BSC020N03LSGATMA1 Product Details

BSC020N03LSGATMA1 Overview


The maximum input capacitance of this device is 7200pF @ 15V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 28A.There is no pulsed drain current maximum for this device based on its rated peak drain current 400A.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.With its 30V power supply, it is capable of handling a dual voltage maximum.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

BSC020N03LSGATMA1 Features


a continuous drain current (ID) of 28A
based on its rated peak drain current 400A.


BSC020N03LSGATMA1 Applications


There are a lot of Infineon Technologies
BSC020N03LSGATMA1 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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