FQA38N30

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Manufacturer part number:FQA38N30

Manufacturer:ON Semiconductor

Description:FQA38N30 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FQA38N30 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE, NOT REC (Last Updated: 1 week ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Number of Pins	3
Weight	6.401g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	QFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
Voltage - Rated DC	300V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	38.4A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	290W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	290W
Turn On Delay Time	80 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	85m Ω @ 19.2A, 10V
Vgs(th) (Max) @ Id	5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	4400pF @ 25V
Current - Continuous Drain (Id) @ 25°C	38.4A Tc
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Rise Time	430ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	190 ns
Turn-Off Delay Time	170 ns
Continuous Drain Current (ID)	38.4A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.085Ohm
Drain to Source Breakdown Voltage	300V
Height	18.9mm
Length	15.8mm
Width	5mm
RoHS Status	RoHS Compliant
Lead Free	Lead Free