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EPC2102ENGRT

  • EPC2102ENGRT
  • EPC2102ENGRT

EPC2102ENGRT

EPC2102ENGRT

EPC

GANFET 2 N-CHANNEL 60V 23A DIE

SOT-23

EPC2102ENGRT Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case Die
Supplier Device Package Die
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series eGaN®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type 2 N-Channel (Half Bridge)
Rds On (Max) @ Id, Vgs 4.4mOhm @ 20A, 5V
Vgs(th) (Max) @ Id 2.5V @ 7mA
Input Capacitance (Ciss) (Max) @ Vds 830pF @ 30V
Current - Continuous Drain (Id) @ 25°C 23A Tj
Gate Charge (Qg) (Max) @ Vgs 6.8nC @ 5V
Drain to Source Voltage (Vdss) 60V
FET Feature GaNFET (Gallium Nitride)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
500 $4.74300 $2371.5
1,000 $4.28400 $4.284

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