MMDF3N03HDR2

new-10%

Manufacturer part number:MMDF3N03HDR2

Manufacturer:Rochester Electronics, LLC

Description:N-CHANNEL POWER MOSFET

Case Package:SOT-23

Datasheet:MMDF3N03HDR2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Surface Mount	YES
Transistor Element Material	SILICON
Packaging	Tape & Reel (TR)
JESD-609 Code	e0
Pbfree Code	no
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
Terminal Finish	TIN LEAD
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE, ULTRA LOW RESISTANCE
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	R-PDSO-G8
Qualification Status	COMMERCIAL
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Power - Max	2W
FET Type	2 N-Channel (Dual)
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	70m Ω @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	630pF @ 24V
Current - Continuous Drain (Id) @ 25°C	4.1A
Gate Charge (Qg) (Max) @ Vgs	16nC @ 10V
Drain to Source Voltage (Vdss)	30V
Drain Current-Max (Abs) (ID)	4.1A
Drain-source On Resistance-Max	0.07Ohm
Pulsed Drain Current-Max (IDM)	40A
DS Breakdown Voltage-Min	30V
Avalanche Energy Rating (Eas)	324 mJ
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Logic Level Gate
RoHS Status	Non-RoHS Compliant