FDMD8530    Description

The device includes two 30V N-channel MOSFET in a dual power supply (5 Mm X 6 Mm) package. HS source and LS drain internal connection for half / full bridge, low source inductor packaging, low RDS (on) / QG and FOM silicon.

FDMD8530         Features

Q1: N-Channel

Max rDS(on) = 1.25 m|? at VGS = 10 V, ID = 35 A

Max rDS(on) = 1.5 m|? at VGS = 4.5 V, ID = 32 A

Q2: N-Channel

Max rDS(on) = 1.25 m|? at VGS = 10 V, ID = 35 A

Max rDS(on) = 1.5 m|? at VGS = 4.5 V, ID = 32 A

Ideal for Flexible Layout in Primary Side of Bridge Topology

100% UIL Tested

Kelvin High Side MOSFET Drive Pin-out Capability

RoHS Compliant

FDMD8530            Applications

This product is general usage and suitable for many different applications.