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EPC2110

  • EPC2110
  • EPC2110

EPC2110

EPC2110

EPC

GANFET 2NCH 120V 3.4A DIE

SOT-23

EPC2110 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Package / Case Die
Supplier Device Package Die
Operating Temperature -40°C~150°C TJ
Packaging Tape & Reel (TR)
Series eGaN®
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
FET Type 2 N-Channel (Dual) Common Source
Rds On (Max) @ Id, Vgs 60mOhm @ 4A, 5V
Vgs(th) (Max) @ Id 2.5V @ 700μA
Input Capacitance (Ciss) (Max) @ Vds 80pF @ 60V
Current - Continuous Drain (Id) @ 25°C 3.4A
Gate Charge (Qg) (Max) @ Vgs 0.8nC @ 5V
Drain to Source Voltage (Vdss) 120V
FET Feature GaNFET (Gallium Nitride)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2,500 $1.02200 $2.044

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