GA35XCP12-247

new-10%

Manufacturer part number:GA35XCP12-247

Manufacturer:GeneSiC Semiconductor

Description:IGBT Transistors 1200V 35A SIC IGBT CoPak

Case Package:SOT-23

Datasheet:GA35XCP12-247 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	-40°C~150°C TJ
Packaging	Tube
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Subcategory	Insulated Gate BIP Transistors
Input Type	Standard
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3V
Reverse Recovery Time	36 ns
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Collector Emitter Saturation Voltage	3V
Test Condition	800V, 35A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 35A
IGBT Type	PT
Gate Charge	50nC
Current - Collector Pulsed (Icm)	35A
Switching Energy	2.66mJ (on), 4.35mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
RoHS Status	RoHS Compliant