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NGTB05N60R2DT4G

  • NGTB05N60R2DT4G
  • NGTB05N60R2DT4G

NGTB05N60R2DT4G

NGTB05N60R2DT4G

ON Semiconductor

NGTB05N60R2DT4G datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

SOT-23

NGTB05N60R2DT4G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Surface Mount
Package / Case DPAK
Number of Pins 3
Packaging Tape & Reel (TR)
Published 2017
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Max Power Dissipation 56W
Reach Compliance Code not_compliant
Element Configuration Single
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 16A
Reverse Recovery Time 70 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.65V
Max Breakdown Voltage 600V
Height 2.38mm
Length 6.73mm
Width 6.22mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
NGTB05N60R2DT4G Product Details

NGTB05N60R2DT4G Description


NGTB05N60R2DT4G is an N-channel IGBT power MOSFET transistor from the manufacturer of ON Semiconductor with a voltage of 600V. The operating temperature of NGTB05N60R2DT4G is -55°C~175°C TJ and its maximum power dissipation are 56W.NGTB05N60R2DT4G has 3 pins and it is available in Tape & Reel (TR) packaging way. The FET Type of NGTB05N60R2DT4G is N-channel and its Reverse Recovery Time is 70 ns.



NGTB05N60R2DT4G Features


  • Reverse Conducting II IGBT

  • IGBT VCE(sat)=1.65V (typ) [IC=5A, VGE=15V]

  • IGBT tf=95ns (typ)

  • Diode VF=1.5V (typ) [IF=5A]

  • Diode trr=70ns (typ) 



NGTB05N60R2DT4G Applications


  • General-purpose amplifier

  • Switching applications

  • Power management

  • Industrial


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