NGD8201NT4G Description

For usage in inductive coil drivers applications, this Logic Level Insulated Gate Bipolar Transistor (IGBT) has monolithic circuitry combining ESD and Overvoltage clamping protection. Direct fuel injection, ignition, and other applications that need for high voltage and high current switching are some of the most common usage.

NGD8201NT4G Features

• Ideal for Coil?on?Plug and Driver?on?Coil Applications

• DPAK Package Offers Smaller Footprint for Increased Board Space

• Gate?Emitter ESD Protection

• Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load

• Integrated ESD Diode Protection

• Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices

• Low Saturation Voltage

• High Pulsed Current Capability

• These are Pb?Free Devices

NGD8201NT4G Applications

• Ignition Systems