IRF523

join

new-10%

Manufacturer part number:IRF523

Manufacturer:Harris Corporation

Description:MOSFET (Metal Oxide) N-Channel 360mOhm @ 5.6A, 10V ±20V 350 pF @ 25 V 15 nC @ 10 V 80 V TO-220-3

Case Package:SOT-23

Datasheet:IRF523 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Package / Case	TO-220-3
Mounting Type	Through Hole
Supplier Device Package	TO-220
Mfr	Harris Corporation
Package	Bulk
Power Dissipation (Max)	60W (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Product Status	Active
Series	-
Operating Temperature	-55°C ~ 175°C (TJ)
Technology	MOSFET (Metal Oxide)
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	360mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 25 V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Gate Charge (Qg) (Max) @ Vgs	15 nC @ 10 V
Drain to Source Voltage (Vdss)	80 V
Vgs (Max)	±20V
FET Feature	-

Quantity	Unit Price	Ext. Price
1	$34.323831	$34.323831
10	$32.380973	$323.80973
100	$30.548088	$3054.8088
500	$28.818951	$14409.4755
1000	$27.187689	$27187.689

IRF523 Overview

With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 350 pF @ 25 V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 80 V.