VMO650-01F

new-10%

Manufacturer part number:VMO650-01F

Manufacturer:IXYS

Description:Trans MOSFET N-CH 100V 690A 4-Pin Y3-DCB

Case Package:SOT-23

Datasheet:VMO650-01F Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	Y3-DCB
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2000
Series	HiPerFET™
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	690A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	VMO
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2500W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5kW
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.8m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	6V @ 130mA
Input Capacitance (Ciss) (Max) @ Vds	59000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	690A Tc
Gate Charge (Qg) (Max) @ Vgs	2300nC @ 10V
Rise Time	500ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	200 ns
Turn-Off Delay Time	800 ns
Continuous Drain Current (ID)	690A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0018Ohm
Drain to Source Breakdown Voltage	100V
Pulsed Drain Current-Max (IDM)	2780A
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free