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SCT30N120D2

  • SCT30N120D2
  • SCT30N120D2

SCT30N120D2

SCT30N120D2

STMicroelectronics

PTD WBG & POWER RF

SOT-23

SCT30N120D2 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -55°C~200°C TJ
Part Status Active
Technology SiCFET (Silicon Carbide)
Power Dissipation-Max 270W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 20A, 20V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1700pF @ 400V
Current - Continuous Drain (Id) @ 25°C 40A Tc
Gate Charge (Qg) (Max) @ Vgs 105nC @ 20V
Drain to Source Voltage (Vdss) 1200V
Drive Voltage (Max Rds On,Min Rds On) 20V
Vgs (Max) +25V, -10V
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $20.75000 $20.75
500 $20.5425 $10271.25
1000 $20.335 $20335
1500 $20.1275 $30191.25
2000 $19.92 $39840
2500 $19.7125 $49281.25

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