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HTNFET-D

HTNFET-D

HTNFET-D

Honeywell Aerospace

MOSFET N-CH 55V 8-DIP

SOT-23

HTNFET-D Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case 8-CDIP Exposed Pad
Supplier Device Package 8-CDIP-EP
Operating Temperature -55°C~225°C TJ
Packaging Bulk
Published 2004
Series HTMOS™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 50W Tj
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400mOhm @ 100mA, 5V
Vgs(th) (Max) @ Id 2.4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds 290pF @ 28V
Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 5V
Drain to Source Voltage (Vdss) 55V
Drive Voltage (Max Rds On,Min Rds On) 5V
Vgs (Max) 10V
Input Capacitance 290pF
Rds On Max 400 mΩ
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $406.00000 $406

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