2SJ360(TE12L,F)

new-10%

Manufacturer part number:2SJ360(TE12L,F)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET P-CH 60V 1A SC-62

Case Package:SOT-23

Datasheet:2SJ360(TE12L,F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-243AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Other Transistors
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	FLAT
Pin Count	3
JESD-30 Code	R-PSSO-F3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	500mW Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.5W
Case Connection	DRAIN
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	730m Ω @ 500mA, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	155pF @ 10V
Current - Continuous Drain (Id) @ 25°C	1A Ta
Gate Charge (Qg) (Max) @ Vgs	6.5nC @ 10V
Rise Time	17ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±20V
Fall Time (Typ)	20 ns
Continuous Drain Current (ID)	1A
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	1A
DS Breakdown Voltage-Min	60V
Radiation Hardening	No
RoHS Status	RoHS Compliant