AUIRF1018E

new-10%

Manufacturer part number:AUIRF1018E

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 60V 79A 3-Pin(3+Tab) TO-220AB

Case Package:SOT-23

Datasheet:AUIRF1018E Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2008
Series	HEXFET®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Power Dissipation-Max	110W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	110W
Case Connection	DRAIN
Turn On Delay Time	13 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	8.4m Ω @ 47A, 10V
Vgs(th) (Max) @ Id	4V @ 100μA
Input Capacitance (Ciss) (Max) @ Vds	2290pF @ 50V
Current - Continuous Drain (Id) @ 25°C	79A Tc
Gate Charge (Qg) (Max) @ Vgs	69nC @ 10V
Turn-Off Delay Time	55 ns
Continuous Drain Current (ID)	79A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0084Ohm
Drain to Source Breakdown Voltage	60V
Avalanche Energy Rating (Eas)	88 mJ
Height	9.02mm
Length	10.67mm
Width	4.83mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant