IAUC120N04S6L009ATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IAUC120N04S6L009ATMA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Operating Temperature
-55°C~175°C TJ
Series
OptiMOS™-6
Part Status
Active
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
150W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
960m Ω @ 60A, 10V
Vgs(th) (Max) @ Id
2V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds
7806pF @ 25V
Current - Continuous Drain (Id) @ 25°C
150A Tc
Gate Charge (Qg) (Max) @ Vgs
128nC @ 10V
Drain to Source Voltage (Vdss)
40V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.95000
$2.95
500
$2.9205
$1460.25
1000
$2.891
$2891
1500
$2.8615
$4292.25
2000
$2.832
$5664
2500
$2.8025
$7006.25
IAUC120N04S6L009ATMA1 Product Details
IAUC120N04S6L009ATMA1 Description
IAUC120N04S6L009ATMA1 developed by Bosch Sensortec is a type of OptiMOS® N-channel power transistor. It is characterized by superior thermal resistance, 175°C operating temperature, and 100% avalanche tested. The IAUC120N04S6L009ATMA1 power transistor is optimized for automotive applications. It is available in the PG-TDSON-8 package so as to save board space.