SI7858ADP-T1-GE3

new-10%

Manufacturer part number:SI7858ADP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 12V 20A PPAK SO-8

Case Package:SOT-23

Datasheet:SI7858ADP-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Number of Pins	8
Weight	506.605978mg
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2008
Series	TrenchFET®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	C BEND
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
Pin Count	8
JESD-30 Code	R-PDSO-C5
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	1.9W Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.9W
Case Connection	DRAIN
Turn On Delay Time	40 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.6m Ω @ 29A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	5700pF @ 6V
Current - Continuous Drain (Id) @ 25°C	20A Ta
Gate Charge (Qg) (Max) @ Vgs	80nC @ 4.5V
Rise Time	40ns
Drive Voltage (Max Rds On,Min Rds On)	2.5V 4.5V
Vgs (Max)	±8V
Fall Time (Typ)	40 ns
Turn-Off Delay Time	140 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	8V
Drain-source On Resistance-Max	0.0026Ohm
Drain to Source Breakdown Voltage	12V
Pulsed Drain Current-Max (IDM)	60A
Height	1.04mm
Length	4.9mm
Width	5.89mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant