3N163-2

new-10%

Manufacturer part number:3N163-2

Manufacturer:Vishay Siliconix

Description:MOSFET P-CH 40V 50MA TO-72

Case Package:SOT-23

Datasheet:3N163-2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Lead, Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-206AF, TO-72-4 Metal Can
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
HTS Code	8541.21.00.95
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	WIRE
Reach Compliance Code	unknown
JESD-30 Code	O-MBCY-W4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE
Power Dissipation-Max	375mW Ta
Operating Mode	ENHANCEMENT MODE
Case Connection	SUBSTRATE
Turn On Delay Time	5 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	250 Ω @ 100μA, 20V
Vgs(th) (Max) @ Id	5V @ 10μA
Input Capacitance (Ciss) (Max) @ Vds	3.5pF @ 15V
Current - Continuous Drain (Id) @ 25°C	50mA Ta
Rise Time	13ns
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	20V
Vgs (Max)	±30V
Turn-Off Delay Time	25 ns
Continuous Drain Current (ID)	50mA
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	0.05A
Drain-source On Resistance-Max	300Ohm
DS Breakdown Voltage-Min	40V
Feedback Cap-Max (Crss)	0.7 pF
RoHS Status	Non-RoHS Compliant