Name: AUIRF2804S-7P
Brand: Infineon Technologies
SKU: AUIRF2804S-7P
Price: 4.67000 USD
Availability: InStock

new-10%

AUIRF2804S-7P

Manufacturer part number:AUIRF2804S-7P

Manufacturer:Infineon Technologies

Description:AUIRF2804S-7P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:AUIRF2804S-7P Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	HEXFET®
JESD-609 Code	e3
Part Status	Not For New Designs
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW-ON RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G6
Number of Elements	1
Power Dissipation-Max	330W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	17 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.6m Ω @ 160A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6930pF @ 25V
Current - Continuous Drain (Id) @ 25°C	240A Tc
Gate Charge (Qg) (Max) @ Vgs	260nC @ 10V
Rise Time	150ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	100 ns
Turn-Off Delay Time	110 ns
Continuous Drain Current (ID)	240A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	40V
Height	4.572mm
Length	10.668mm
Width	9.652mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant

AUIRF2804S-7P Product Details

AUIRF2804S-7P Description

AUIRF2804S-7P developed by Infineon Technologies is a member of HEXFET® Power MOSFETs. It is specifically designed based on the latest processing techniques to achieve extremely low on-resistance per silicon area, making it well-suited for automotive applications. A 175°C junction operating temperature, fast switching speed, and improved repetitive avalanche rating can be ensured when operating in automotive applications or other applications. The AUIRF2804S-7P power MOSFET is supplied in the D2Pak package to meet the requirements of space-constrained applications.