AUIRF3805S-7P

new-10%

Manufacturer part number:AUIRF3805S-7P

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 55V 160A D2PAK-7

Case Package:SOT-23

Datasheet:AUIRF3805S-7P Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	13 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
Number of Pins	7
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2010
Series	HEXFET®
JESD-609 Code	e3
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
ECCN Code	EAR99
Additional Feature	AVALANCHE RATED, ULTRA-LOW RESISTANCE
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	30
JESD-30 Code	R-PSSO-G6
Number of Elements	1
Power Dissipation-Max	300W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	300W
Case Connection	DRAIN
Turn On Delay Time	23 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.6m Ω @ 140A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	7820pF @ 25V
Current - Continuous Drain (Id) @ 25°C	160A Tc
Gate Charge (Qg) (Max) @ Vgs	200nC @ 10V
Rise Time	130ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	52 ns
Turn-Off Delay Time	80 ns
Continuous Drain Current (ID)	240A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0026Ohm
Drain to Source Breakdown Voltage	55V
Avalanche Energy Rating (Eas)	680 mJ
Height	4.55mm
Length	10.35mm
Width	10.05mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant